Optical and Electrical Properties of ECR-PECVD Grown SiCN Thin Films

Recent progress in scaling down the metal-oxide semiconductor (MOS) devices accompanied limitations arising from quantum effects, which leads to a search for new materials. Silicon oxide (SiO2) thin films have been a favourable dielectric for more than 4 decades. Their usage have become impractical due to the power dissipation and delay in interconnects. To increase the electrical performance, low extinction coefficient (low-k) dielectric …