Journal article
Europium Doped Silicon Oxide Thin Films Using an Integrated PECVD and Sputtering System
Abstract
Over the last decades, silicon-based materials have exhibited outstanding electronic properties and been used in photovoltaic and electrical devices such as transistors [1]. However, due to their indirect band gap nature and poor light emitting properties, they are not satisfying candidates when it comes to photonics. One way through which this poor performance is sorted out is doping of rare earth (RE) elements into the silicon nanostructure …
Authors
Namin RB; Mascher P; Khatami Z
Journal
ECS Meeting Abstracts, Vol. MA2020-02, No. 42, pp. 2749–2749
Publisher
The Electrochemical Society
Publication Date
November 23, 2020
DOI
10.1149/ma2020-02422749mtgabs
ISSN
2151-2043