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Europium Doped Silicon Oxide Thin Films Using an...
Journal article

Europium Doped Silicon Oxide Thin Films Using an Integrated PECVD and Sputtering System

Abstract

Over the last decades, silicon-based materials have exhibited outstanding electronic properties and been used in photovoltaic and electrical devices such as transistors [1]. However, due to their indirect band gap nature and poor light emitting properties, they are not satisfying candidates when it comes to photonics. One way through which this poor performance is sorted out is doping of rare earth (RE) elements into the silicon nanostructure …

Authors

Namin RB; Mascher P; Khatami Z

Journal

ECS Meeting Abstracts, Vol. MA2020-02, No. 42, pp. 2749–2749

Publisher

The Electrochemical Society

Publication Date

November 23, 2020

DOI

10.1149/ma2020-02422749mtgabs

ISSN

2151-2043