(Invited) Effect of the Plasma Etching on InAsP/InP Quantum Well Structures Measured through Low Temperature Micro-Photoluminescence and Cathodoluminescence

Plasma etching is widely used for the fabrication of photonic devices with InP, GaAs, and their ternary or quaternary compounds. Generally speaking, these processes are rather well controlled in terms of the geometry and morphology of the fabricated features. However, the microscopic interaction between the etching ions / radicals and the semiconductors have not been paid much attention [1]. In order to investigate this issue, we design and …