Instability of the Noise Level in Polymer Field‐Effect Transistors with Non‐Stationary Electrical Characteristics

The low frequency noise (LFN) properties of field‐effect transistors (FETs) using polymers as the semiconducting substrate material are investigated and explained in terms of the charge carrier transport in polymer thin‐film structure. Three mechanisms contribute to the carrier transport — charge injection from source electrode into polymer, charge hopping between polymer molecules for drift transport toward the drain, and charge buildup, …