Atomic‐Scale Compositional Fluctuations in Ternary III‐Nitride Nanowires

Ternary InGaN and AlGaN alloys have been sought after for the application of various optoelectronic devices spanning a large spectral range between the deep ultraviolet (DUV) and infrared (IR), including light‐emitting diodes, and laser diodes. Conventional planar devices suffer from a high density of dislocations due to the large lattice mismatch, which together with the non‐ideal alloy mixing, are established as the cause for various phase …