Correlative Nanoscale Luminescence and Elemental Mapping in InGaN/(Al)GaN Dot‐in‐a‐wire Heterostructures

Ternary InGaN compounds show great promise for light‐emitting diode (LED) applications because of bandgap energies (0.7 – 3.4 eV) that can be tailored to have emission wavelengths spanning the entire visible spectrum. Complex III‐N device heterostructures have been incorporated into GaN nanowires (NWs) recently, but exhibit emission linewidths that are broader than expected for their corresponding planar counterparts, as measured with …