Chapter
Ferroelectric/dielectric composite tunnel junctions: influence of the stacking sequence on their microstructure
Abstract
Increasing the tunnel electroresistance of ferroelectric tunnel junctions can be achieved by replacing the single ferroelectric barrier by a ferroelectric/dielectric bilayer. For a given thickness of the layers, the stacking sequence (ferroelectric/dielectric or dielectric/ferroelectric) can lead to different resistivity. In this paper, we study composite tunnel junctions based on the Mn‐BiFeO3/SrTiO3 bilayer, deposited on a LaSrMnO3 (LSMO) …
Authors
Pailloux F; Bugnet M; Crassous A; Fusil S; Garcia V; Bibes M; Botton G; Barthélémy A; Pacaud J
Book title
European Microscopy Congress 2016: Proceedings
Pagination
pp. 1116-1117
Publisher
Wiley
DOI
10.1002/9783527808465.emc2016.6917