Room-Temperature Atomic Layer Deposition of Elemental Antimony

Atomic layer deposition (ALD) of elemental antimony was achieved on hydrogen-terminated silicon (H–Si) and SiO2/Si substrates using Sb­(SiMe3)3 and SbCl3 in the temperature range 23–65 °C. The mirrorlike films were confirmed to be composed of crystalline antimony by XPS (for the film deposited at 35 °C) and XRD, with low impurity levels and strong preferential orientation of crystal growth relative to the substrate surface. To the best of our …