Journal article
Photoluminescence Enhancement in WS2 Nanosheets Passivated with Oxygen Ions: Implications for Selective Area Doping
Abstract
The dominant defect types in chemical-vapor-deposited (CVD) tungsten disulfide (WS2) monolayers (ML) were regulated through mask-assisted scattered-oxygen-ion (O+) implantation. A shadow mask allowed for two distinctive implantation regions: directly bombarded and mask-shaded. Upon direct implantation, photoluminescence (PL) was universally suppressed, whereas in the mask-shaded region, PL was enhanced by up to 500% at low doses before …
Authors
Wang Y-H; Ho H-M; Ho X-L; Lu L-S; Hsieh S-H; Huang S-D; Chiu H-C; Chen C-H; Chang W-H; White JD
Journal
ACS Applied Nano Materials, Vol. 4, No. 11, pp. 11693–11699
Publisher
American Chemical Society (ACS)
Publication Date
November 26, 2021
DOI
10.1021/acsanm.1c02265
ISSN
2574-0970