Optimizing PWM Control for Efficiency and Reduction of False Turn-On Events in Synchronous Buck GaN Converters

Half-bridge GaN power converters are susceptible to false turn-on events, which can lead to shoot-through and potentially device-damaging currents. There are three main parameters that can be adjusted in PWM schemes to reduce the likelihood of false turn-on events: negative gate bias, gate resistance, and deadtime. However, these PWM parameters also affect converter efficiency in the inverse way, meaning less false turn-on events must be …