Journal article
Low temperature micro-photoluminescence spectroscopy of microstructures with InAsP/InP strained quantum wells
Abstract
Ridge microstructures were prepared by reactive ion etching (RIE) of a series of stacked InAs x P 1−x quantum wells (QWs) with step graded compositions grown on InP by molecular beam epitaxy. These microstructures were characterized by low temperature micro-photoluminescence. The photoluminescence (PL) emission associated with each of the QWs was clearly identified and a model for their line shape was implemented. PL line-scans were measured …
Authors
Landesman JP; Isik-Goktas N; LaPierre RR; Levallois C; Ghanad-Tavakoli S; Pargon E; Petit-Etienne C; Jiménez J
Journal
Journal of Physics D, Vol. 54, No. 44,
Publisher
IOP Publishing
Publication Date
November 4, 2021
DOI
10.1088/1361-6463/ac1a33
ISSN
0022-3727