Home
Scholarly Works
Anomalous drain-induced barrier lowering in short...
Journal article

Anomalous drain-induced barrier lowering in short channel NMOS devices at 77 K

Authors

Deen MJ

Journal

Electronics Letters, Vol. 26, No. 18, pp. 1493–1495

Publisher

Institution of Engineering and Technology (IET)

Publication Date

August 30, 1990

DOI

10.1049/el:19900959

ISSN

0013-5194
View published work (Non-McMaster Users)

Contact the Experts team