Annealing Effects on the Chemical Configuration of Uncapped and (Poly-Si)-Capped HfO x N y Films Deposited on Si(001)

We use spatially resolved spectroscopy in a scanning transmission electron microscope to study the thermal stability of the HfOxNy∕Si(001) system with and without an in situ capping layer of silicon. The films were deposited by metallorganic chemical vapor deposition using the amide precursor tetrakis(diethylamido)hafnium with NO as the oxidant. A SiOxNy interfacial layer (∼1.8nm) is observed at the HfOxNy∕substrate interface for films directly …