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Engineering the Carrier Dynamics of InGaN Nanowire...
Journal article

Engineering the Carrier Dynamics of InGaN Nanowire White Light-Emitting Diodes by Distributed p-AlGaN Electron Blocking Layers

Abstract

We report on the demonstration of a new type of axial nanowire LED heterostructures, with the use of self-organized InGaN/AlGaN dot-in-a-wire core-shell nanowire arrays. The large bandgap AlGaN shell is spontaneously formed on the sidewall of the nanowire during the growth of AlGaN barrier of the quantum dot active region. As such, nonradiative surface recombination, that dominates the carrier dynamics of conventional axial nanowire LED …

Authors

Nguyen HPT; Djavid M; Woo SY; Liu X; Connie AT; Sadaf S; Wang Q; Botton GA; Shih I; Mi Z

Journal

Scientific Reports, Vol. 5, No. 1,

Publisher

Springer Nature

DOI

10.1038/srep07744

ISSN

2045-2322