Journal article
AlN/h-BN Heterostructures for Mg Dopant-Free Deep Ultraviolet Photonics
Abstract
Aluminum-rich AlGaN is the ideal material system for emerging solid-state deep-ultraviolet (DUV) light sources. Devices operating in the near-UV spectral range have been realized; to date, however, the achievement of high-efficiency light-emitting diodes (LEDs) operating in the UV-C band (200-280 nm specifically) has been hindered by the extremely inefficient p-type conduction in AlGaN and the lack of DUV-transparent conductive electrodes. …
Authors
Laleyan DA; Zhao S; Woo SY; Tran HN; Le HB; Szkopek T; Guo H; Botton GA; Mi Z
Journal
Nano Letters, Vol. 17, No. 6, pp. 3738–3743
Publisher
American Chemical Society (ACS)
Publication Date
June 14, 2017
DOI
10.1021/acs.nanolett.7b01068
ISSN
1530-6984