Journal article
Influence of Nitrogen on the Luminescence Properties of Ce-Doped SiOxNy
Abstract
We report wideband photoluminescent emission from cerium-doped silicon oxynitride (Ce-doped SiOxNy) thin films deposited using electron cyclotron resonance plasma enhanced chemical-vapor deposition (ECR-PECVD). The in situ doping with Cerium (Ce) was performed using a volatile metal organic powder, (Ce[tmhd]4). Oxygen was gradually substituted by nitrogen to produce SiOxNy thin films with varying nitrogen to oxygen ratio, to explore the effect …
Authors
Gao Y; Khatami Z; Mascher P
Journal
ECS Journal of Solid State Science and Technology, Vol. 10, No. 7,
Publisher
The Electrochemical Society
Publication Date
July 1, 2021
DOI
10.1149/2162-8777/ac12dd
ISSN
2162-8769