Journal article
Redistribution and activation of ion implanted As in Si during RTA for concentrations around solid solubility
Abstract
The redistribution and electrical activity of ion implanted As in Si after RTA at temperatures of 800 to 1100°C for 25 s have been studied by combination of RBS/channeling, Hall-effect/resistivity measurements, and TEM. Complete electrical activity is observed after RTA at temperatures above - 1050°C for the investigated as-implanted peak concentration range (1 x 10201 × 1021 cm−3). Very good agreement is found between experimental and …
Authors
Shiryaev SY; Larsen AN; Sørensen ES; Tidemand-Petersson P
Journal
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, Vol. 19, , pp. 507–511
Publisher
Elsevier
Publication Date
1987
DOI
10.1016/s0168-583x(87)80101-5
ISSN
0168-583X