Chapter
Chapter 7 Bismuth-containing III–V semiconductors Epitaxial growth and physical properties
Abstract
The growth, surface, and bulk properties of GaAsBi and related III-V alloys are examined and the potential benefits of these materials are explored in terms of device applications. The methods used include molecular beam epitaxy growth, scanning tunneling microscopy, scanning electron microscopy, transmission electron microscopy, photoluminescence spectroscopy, deep-level transient spectroscopy, dynamic modeling, and theoretical analysis. The …
Authors
Batool Z; Chatterjee S; Chernikov A; Duzik A; Fritz R; Gogineni C; Hild K; Hosea TJC; Imhof S; Johnson SR
Book title
Molecular Beam Epitaxy
Pagination
pp. 139-158
Publisher
Elsevier
Publication Date
2013
DOI
10.1016/b978-0-12-387839-7.00007-5