Journal article
Oxide Phosphor Green EL on Glass Substrates
Abstract
Abstract A new thin film EL device based on green emitting oxide phosphor Zn 2 Si .5 Ge. 5 O 4 :Mn has been realized on glass and quartz substrates. The device relies on thin film dielectrics which are sputter deposited. Maximum processing temperature for the device is 700°C and excellent brightness of over 180 cd/m 2 at 60 Hz may be achieved at 50 V above threshold. Typical device structures and their performance will be described.
Authors
Kitai AH; Cook KA; Zhang Y; Ho D; Stevanovic DV; Huang Z; Nakua A
Journal
SID Symposium Digest of Technical Papers, Vol. 30, No. 1, pp. 596–597
Publisher
Wiley
Publication Date
May 1999
DOI
10.1889/1.1834093
ISSN
0097-966X