Gd4Ge3–x Pn x (Pn = P, Sb, Bi, x = 0.5–3): Stabilizing the Nonexisting Gd4Ge3 Binary through Valence Electron Concentration. Electronic and Magnetic Properties of Gd4Ge3–x Pn x

Gd(4)Ge(3-x)Pn(x) (Pn = P, Sb, Bi; x = 0.5-3) phases have been prepared and characterized using X-ray diffraction, wavelength-dispersive spectroscopy, and magnetization measurements. All Gd(4)Ge(3-x)Pn(x) phases adopt a cubic anti-Th(3)P(4) structure, and no deficiency on the Gd or p-element site could be detected. Only one P-containing phase with the Gd(4)Ge(2.51(5))P(0.49(5)) composition could be obtained, as larger substitution levels did …