Mapping electrostatic potentials across the p‐n junction in GaAs nanowires by off‐axis electron holography

The development of III−V materials on Si platforms, with the aim of reducing production costs while achieving high conversion efficiency, has been a continuing area of photovoltaic research in the last decades [1,2]. This process is challenging due to large lattice mismatches, the polar non‐polar interfaces and the differences in thermal expansion coefficients. The use of III–V nanowires (NWs) provides a novel method of integrating III‐V …