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RF CMOS NOISE CHARACTERIZATION AND MODELING
Journal article

RF CMOS NOISE CHARACTERIZATION AND MODELING

Abstract

This paper presents a through description of radio frequency (RF) noise characterization and modeling of CMOS transistors. It begins with the definition of the four noise parameter of a two-port network - minimum noise figure (NF min

Authors

CHEN C-H; DEEN MJ

Journal

International Journal of High Speed Electronics and Systems, Vol. 11, No. 04, pp. 1085–1157

Publisher

World Scientific Publishing

Publication Date

December 2001

DOI

10.1142/s0129156401001064

ISSN

0129-1564

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