Volatile products and endpoint detection in reactive ion etching of III–V compounds with a broad beam ECR source

A broad beam ECR plasma source has been applied to low pressure hydrocarbon reactive ion etching of III–V compounds. An additional RF bias is applied to the sample stage providing the means for independent control of current density and bombarding energy of ions on the sample surface. Chemical aspects of the etching process have been investigated with a differentially pumped energy selective Hiden quadrupole mass spectrometer. In particular, …