Journal article
Time-Gated and Multi-Junction SPADs in Standard 65 nm CMOS Technology
Abstract
SPADs (Single-Photon Avalanche Diodes) are important detectors for a wide range of applications including positron emission tomography, Raman spectroscopy, light detection and ranging, and quantum key distribution. For some applications, custom image sensor technologies are used, but at a higher cost and lower performance imagers when compared to implementation in a standard planar CMOS technology. In this paper, we explore time-gating and …
Authors
Jiang W; Chalich Y; Scott R; Deen MJ
Journal
IEEE Sensors Journal, Vol. 21, No. 10, pp. 12092–12103
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
January 15, 2021
DOI
10.1109/jsen.2021.3063319
ISSN
1530-437X