Journal article
Spin relaxation of holes in In0.53Ga0.47As/InP quantum wells
Abstract
Polarization-resolved photoluminescence was used to study spin relaxation of photoexcited holes in In0.53Ga0.47As/InP quantum wells in a quantizing magnetic field as a function of temperature. At a temperature below 10 K, the circular polarization of the photoluminescence due to the spin-split valence band Landau levels was found temperature-independent. In this temperature range fast hole spin relaxation as compared to their lifetime leads to …
Authors
Patricio MAT; Tavares BGM; Jacobsen JM; Teodoro MD; LaPierre RR; Pusep YA
Journal
Physica E Low-dimensional Systems and Nanostructures, Vol. 131, ,
Publisher
Elsevier
Publication Date
7 2021
DOI
10.1016/j.physe.2021.114700
ISSN
1386-9477