Journal article
Long catalyst-free InAs nanowires grown on silicon by HVPE
Abstract
We report for the first time on the hydride vapor phase epitaxy (HVPE) growth of long (26 μm) InAs nanowires on Si(111) substrate. The thermodynamic and kinetic mechanisms involved during the growth of such long nanowires are identified.
Authors
Grégoire G; Gil E; Zeghouane M; Bougerol C; Hijazi H; Castelluci D; Dubrovskii VG; Trassoudaine A; Goktas NI; LaPierre RR
Journal
CrystEngComm, Vol. 23, No. 2, pp. 378–384
Publisher
Royal Society of Chemistry (RSC)
Publication Date
January 18, 2021
DOI
10.1039/d0ce01385d
ISSN
1466-8033