Journal article
Theory and experiment of liquid phase epitaxy on curved InP surface
Abstract
Theoretical analysis of growing processes have been made in the case of various curved InP surface with different reaction speeds used in the development of semiconductor laser diodes by liquid-phase epitaxy (LPE). They may perfectly explain some phenomena in experiments of LPE on curved InP surfaces. The numerical calculation has also been made and is consistent with the experimental results after the surface reaction speed is well imitated. …
Authors
Li X; Chen G; Jian S
Journal
Pan Tao Ti Hsueh Pao Chinese Journal of Semiconductors, Vol. 16, No. 2, pp. 93–100
Publication Date
February 1, 1995
ISSN
0253-4177