Novel Dual-Metal Junctionless Nanotube Field-Effect Transistors for Improved Analog and Low-Noise Applications

Dual-metal junctionless nanotube field-effect transistors (DMJN-TFETs) for improvised analog and digital applications are described. It has been realized that, compared with existing junctionless nanowire FETs, in particular, junctionless-gate all around (J-GAA) metal oxide semiconductors (MOS) FETs, dual-metal junctionless-gate all around (DMJ-GAA) MOSFETs, and junctionless nanotube (JN) FETs, DMJN-TFET MOSFETs exhibit higher Ids, gm, gd and …