Strained InGaAs/GaAs Quantum-Well Laser Emitting at 1054 nm

In this paper, we present an InGaAs/GaAs strain QW laser with tilted waveguide emitting at 1054 nm that has been fabricated by Metal-Organic Chemical-Vapor Deposition (MOCVD) on a GaAs substrate. The active region consists of 6 nm QW separated by a 60-nm barrier within a two-step graded-index separated-confinement heterostructure (GRINSCH) region. The use of a Strained Buffer Layer (SBL) is shown to significantly improve the laser performance. The composition and micro-structure quality of the QW was measured by high-resolution X-ray diffraction. The strain QW laser exhibits a threshold current of 9 mA and a slope efficiency of 0.4 W/A (unused antireflection coating on the facets). Stable fundamental transverse mode operation was obtained up to 33 mW emitted power at an injection current of 100 mA. The spectral width of the strain QW laser is 1.6 nm at an injection current of 50 mA.