Journal article
Field Emission Characteristics of InSb Patterned Nanowires
Abstract
Abstract InSb nanowire arrays with different geometrical parameters, diameter and pitch, are fabricated by a top‐down etching process on Si(100) substrates. Field emission properties of InSb nanowires are investigated by using a nano‐manipulated tip anode inside of a scanning electron microscope. Stable field emission current is reported, with a maximum intensity extracted from a single nanowire of 1 µA, corresponding to a current density as …
Authors
Giubileo F; Passacantando M; Urban F; Grillo A; Iemmo L; Pelella A; Goosney C; LaPierre R; Di Bartolomeo A
Journal
Advanced Electronic Materials, Vol. 6, No. 10,
Publisher
Wiley
Publication Date
10 2020
DOI
10.1002/aelm.202000402
ISSN
2199-160X