Nanojoining and tailoring of current–voltage characteristics of metal-P type semiconductor nanowire heterojunction by femtosecond laser irradiation

Selective engineering of the interface between nanoscale components and the electrical properties of heterojunctions is key to the development of next-generation nanoscale circuit elements. In this paper, we show how laser processing of a metal-P type semiconductor nanoscale heterojunction between Ag and CuO nanowires can be used to control the nature of the electrical contact by reducing the Schottky barrier at the Ag–CuO interface to Ohmic …