Physics-based analytic modeling and simulation of gate-induced drain leakage and linearity assessment in dual-metal junctionless accumulation nano-tube FET (DM-JAM-TFET)

Physics-based analytical model is proposed in this paper which analyzes the effect of temperature, channel length and silicon film radius on gate-induced drain leakages (GIDL) in dual-metal junctionless accumulation nano-tube FET (DM-JAM-TFET). Formulation and analysis for electric field, Ez, surface potential and gate-induced drain leakage current, Igidl have been done with the help of appropriate boundary conditions utilized in solving …