Current Status and Future Trends of GaN HEMTs in Electrified Transportation

Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) enable higher efficiency, higher power density, and smaller passive components resulting in lighter, smaller and more efficient electrical systems as opposed to conventional Silicon (Si) based devices. This paper investigates the detailed benefits of using GaN devices in transportation electrification applications. The material properties of GaN including the applications of GaN …