Polarization insensitive semiconductor laser amplifiers with tensile strained InGaAsP/InGaAsP multiple quantum well structure

Data on semiconductor laser amplifiers with a small tensile strain in the wells of multiple quantum well structures are presented. Semiconductor amplifiers with a small strain of 0.2% exhibit polarization insensitive characteristics with a signal gain of 15 dB in the 1.5 μm wavelength range. The enhancement of TM mode gain due to tensile strain is studied by measuring the dependence of amplified spontaneous emission spectra on device length and tensile strain.