Characterization of He-plasma-assisted GSMBE InGaAsP

In this paper, we present the properties of InGaAsP (1.55 /spl mu/m) grown by He-plasma-assisted GSMBE. Variable energy positron annihilation studies, room temperature hall effect measurements and SIMS analysis have been performed. It is evident that this material contains traps which reduce the carrier concentration in both doped and undoped samples, open volume defects which enlarge upon anneal, and a small concentration of hydrogen, all of which may play a role in the behavior of this novel material.