Re-growth over grating-etched InGaAsP

The growth of InP by gas-source molecular beam epitaxy (GSMBE) over InGaAsP patterned with an etched grating has been investigated with emphasis on establishing the conditions to minimize both contamination at the re-growth interface and the mass re-flow during the in-situ, high temperature cleaning procedures. Transmission Electron Microscopy (TEM) has been used to determine the effects of mass transport into the bottom of the grating grooves, and Secondary Ion Mass Spectrometry (SIMS) profiling has yielded information on the residual contamination at the re-growth interface.