Journal article
Review of Loss Distribution, Analysis, and Measurement Techniques for GaN HEMTs
Abstract
In recent years, there has been a trend for improved performance in semiconductor switches, allowing power electronic systems to achieve higher efficiency and higher power density. This desired improvement has led to the adoption of wide-bandgap devices-based switches due to the fact that silicon (Si) has been reaching its material limit. Si carbide and gallium nitride (GaN) offer faster switching speeds. Therefore, they require higher level …
Authors
Gareau J; Hou R; Emadi A
Journal
IEEE Transactions on Power Electronics, Vol. 35, No. 7, pp. 7405–7418
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
DOI
10.1109/tpel.2019.2954819
ISSN
0885-8993