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Performance improvement for solution-processed...
Journal article

Performance improvement for solution-processed high-mobility ZnO thin-film transistors

Abstract

The fabrication technology of stable, non-toxic, transparent, high performance zinc oxide (ZnO) thin-film semiconductors via the solution process was investigated. Two methods, which were, respectively, annealing a spin-coated precursor solution and annealing a drop-coated precursor solution, were compared. The prepared ZnO thin-film semiconductor transistors have well-controlled, preferential crystal orientation and exhibit superior …

Authors

Li CS; Li YN; Wu YL; Ong BS; Loutfy RO

Journal

Journal of Physics D, Vol. 41, No. 12,

Publisher

IOP Publishing

Publication Date

June 21, 2008

DOI

10.1088/0022-3727/41/12/125102

ISSN

0022-3727