Journal article
Performance improvement for solution-processed high-mobility ZnO thin-film transistors
Abstract
The fabrication technology of stable, non-toxic, transparent, high performance zinc oxide (ZnO) thin-film semiconductors via the solution process was investigated. Two methods, which were, respectively, annealing a spin-coated precursor solution and annealing a drop-coated precursor solution, were compared. The prepared ZnO thin-film semiconductor transistors have well-controlled, preferential crystal orientation and exhibit superior …
Authors
Li CS; Li YN; Wu YL; Ong BS; Loutfy RO
Journal
Journal of Physics D, Vol. 41, No. 12,
Publisher
IOP Publishing
Publication Date
June 21, 2008
DOI
10.1088/0022-3727/41/12/125102
ISSN
0022-3727