Nanoanalytical quantification of the nitrogen content in Ga(NAs)∕GaAs by using transmission electron microscopy in combination with refined structure factor calculation

We have studied systematically the nitrogen content in Ga(NAs)∕GaAs quantum wells by (002) dark-field transmission electron microscopy (TEM). The nitrogen contents derived from this analysis, when assuming that all the atoms occupy their unperturbed positions in a virtual crystal, deviate significantly from the nitrogen contents we derive for the same samples by other methods; for example, high-resolution x-ray diffraction (XRD) and dynamical …