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Atomic scale annealing effects on InxGa1-xNyAs1-y...
Journal article

Atomic scale annealing effects on InxGa1-xNyAs1-y studied by TEM three-beam imaging

Abstract

A transmission electron microscopy (TEM) method for simultaneous measurement of indium and nitrogen content in InGaNAs at atomic scale is introduced, tested, and applied to investigate thermal annealing effects on structural properties. Our technique is based on the extraction of strain and chemical sensitive contrast from a single three-beam TEM lattice fringe image by subsequent decomposition into 220 and 020 two-beam fringe images, being …

Authors

Müller K; Schowalter M; Rosenauer A; Hu D; Schaadt DM; Hetterich M; Gilet P; Rubel O; Fritz R; Volz K

Journal

Physical Review B, Vol. 84, No. 4,

Publisher

American Physical Society (APS)

Publication Date

July 15, 2011

DOI

10.1103/physrevb.84.045316

ISSN

2469-9950