Recombination mechanisms and band alignment of GaAs1−xBix/GaAs light emitting diodes

We investigate the temperature and pressure dependence of the light-current characteristics and electroluminescence spectra of GaAs1−xBix/GaAs light emitting diodes. The temperature dependence of the emission wavelength shows a relatively low temperature coefficient of emission peak shift of 0.19 ± 0.01 nm/K. A strong decrease in emission efficiency with increasing temperature implies that non-radiative recombination plays an important role on …