Journal article
Temperature dependence of hole mobility in GaAs1−xBix alloys
Abstract
The Hall mobility of holes has been measured in GaAs grown at low temperatures and in GaAs1−xBix alloys for Bi concentrations x ranging from 0.94% to 5.5%. The hole mobility is found to decrease with increasing Bi content. The temperature dependence of the mobility in the 25 to 300 K range is fit with a combination of phonon scattering, ionized impurity scattering, and Bi related scattering. The hole scattering cross-section for an isolated Bi …
Authors
Beaton DA; Lewis RB; Masnadi-Shirazi M; Tiedje T
Journal
Journal of Applied Physics, Vol. 108, No. 8,
Publisher
AIP Publishing
Publication Date
October 15, 2010
DOI
10.1063/1.3493734
ISSN
0021-8979