Complete structural and strain analysis of single GaAs/(In,Ga)As/GaAs core–shell–shell nanowires by means of in-plane and out-of-plane X-ray nanodiffraction

Typically, core–shell–shell semiconductor nanowires (NWs) made from III–V materials with low lattice mismatch grow pseudomorphically along the growth axis, i.e. the axial lattice parameters of the core and shell materials are the same. Therefore, both the structural composition and interface strain of the NWs are encoded along directions perpendicular to the growth axis. Owing to fluctuations in the supplied growth species during molecular beam …