Journal article
InSb nanowires for multispectral infrared detection
Abstract
InSb nanowire (NW) arrays fabricated by a top-down etching process were investigated for multispectral infrared photodetection. A 2.5 μm thick film of InSb was grown on Si (100) by molecular beam epitaxy using an AlSb buffer layer to alleviate defects associated with lattice mismatch strain, as confirmed by scanning electron microscopy and x-ray diffraction. Using a Ti mask patterned by electron beam lithography, InSb NW arrays with diameters …
Authors
Goosney CJ; Jarvis VM; Wilson DP; Goktas NI; LaPierre RR
Journal
Semiconductor Science and Technology, Vol. 34, No. 3,
Publisher
IOP Publishing
Publication Date
March 1, 2019
DOI
10.1088/1361-6641/ab0476
ISSN
0268-1242