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Direct silicon bonding dynamics: A coupled...
Journal article

Direct silicon bonding dynamics: A coupled fluid/structure analysis

Abstract

During direct bonding, a thin gas film is trapped in-between the two wafers, leading to an interactive fluid/structure dynamics. A model of bonding dynamics is formulated using the plate approximation, Reynolds equation, and adhesion forces as the boundary condition at the bonding front. The transient equation is solved numerically in a one dimensional cylindrical case. The entire process, including initiation and propagation of the front, is modelled. The model is supported by experimental data from an original setup involving non-contact optical sensors to measure the vertical movement of the wafer during the bonding sequence.

Authors

Navarro E; Bréchet Y; Moreau R; Pardoen T; Raskin J-P; Barthelemy A; Radu I

Journal

Applied Physics Letters, Vol. 103, No. 3,

Publisher

AIP Publishing

Publication Date

July 15, 2013

DOI

10.1063/1.4813312

ISSN

0003-6951

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