Journal article
Growth temperature dependence for the formation of vacancy clusters in Si/Si0.64Ge0.36/Si structures
Abstract
The incorporation of vacancy clusters and vacancy point defects during the growth of Si/Si0.64Ge0.36/Si structures has been observed for growth temperatures between 250 °C and 550 °C using positron annihilation spectroscopy. A strong correlation between the electrical characteristics of the structures and the size and concentration of the clusters is observed. For the onset of two-dimensional hole gas behavior, a defect concentration less than …
Authors
Knights AP; Gwilliam RM; Sealy BJ; Grasby TJ; Parry CP; Fulgoni DJF; Phillips PJ; Whall TE; Parker EHC; Coleman PG
Journal
Journal of Applied Physics, Vol. 89, No. 1, pp. 76–79
Publisher
AIP Publishing
Publication Date
January 1, 2001
DOI
10.1063/1.1329145
ISSN
0021-8979