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Impurity bands in moderately doped semiconductors...
Journal article

Impurity bands in moderately doped semiconductors and their effect on the MOS C-V freeze-out characteristics H. D. Barber, K. C. Lee and J. Erle Jones Solid-State Electronics, 19, p.365 (1976)

Journal

Microelectronics Journal, Vol. 10, No. 1,

Publisher

Elsevier

Publication Date

May 1, 1979

DOI

10.1016/s0026-2692(79)80123-8

ISSN

0026-2692

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