Highly ordered vertical GaAs nanowire arrays with dry etching and their optical properties

We report fabrication methods, including metal masks and dry etching, and demonstrate highly ordered vertical gallium arsenide nanowire arrays. The etching process created high aspect ratio, vertical nanowires with insignificant undercutting from the mask, allowing us to vary the diameter from 30 nm to 400 nm with a pitch from 250 nm to 1100 nm and length up to 2.2 μm. A diameter to pitch ratio of ∼68% was achieved. We also measured the …