Journal article
Surface depletion and electrical transport model of AlInP-passivated GaAs nanowires
Abstract
Fabrication, current–voltage characterization and analytical modeling of an AlInP-passivated GaAs nanowire (NW) ensemble device are presented. During fabrication, sonication was used as a novel and crucial step to ensure effective contacting of the NWs. Current–voltage characteristics of the passivated NW devices were fitted using an analytical surface depletion and transport model which improves upon established models by implementing a …
Authors
Chia ACE; Tirado M; Thouin F; Leonelli R; Comedi D; LaPierre RR
Journal
Semiconductor Science and Technology, Vol. 28, No. 10,
Publisher
IOP Publishing
Publication Date
October 1, 2013
DOI
10.1088/0268-1242/28/10/105026
ISSN
0268-1242