Gallium loading of gold seed for high yield of patterned GaAs nanowires

A method is presented for maximizing the yield and crystal phase purity of vertically aligned Au-assisted GaAs nanowires grown with an SiOx selective area epitaxy mask on GaAs (111)B substrates. The nanowires were grown by the vapor-liquid-solid (VLS) method in a gas source molecular beam epitaxy system. During annealing, Au VLS seeds will alloy with the underlying GaAs substrate and collect beneath the SiOx mask layer. This behavior is …